pn4355 / mmbt4355 symbol parameter value units v ceo collector-emitter voltage 60 v v cbo collector-base voltage 60 v v ebo emitter-base voltage 10 v i c collector current - continuous 800 ma t j , t stg operating and storage junction temperature range -55 to +150 c pnp general purpose amplifier this device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 ma. sourced from process 67. see tn4033a for characteristics. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. pn4355 c b e to-92 mmbt4355 c b e sot-23 mark: 81 thermal characteristics ta = 25c unless otherwise noted symbol characteristic max units pn4355 *mmbt4355 p d total device dissipation derate above 25 c 625 5.0 350 2.8 mw mw/ c r q jc thermal resistance, junction to case 83.3 c/w r q ja thermal resistance, junction to ambient 200 357 c/w * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06." discrete power & signal technologies ? 1997 fairchild semiconductor corporation
pn4355 / mmbt4355 electrical characteristics ta = 25c unless otherwise noted symbol parameter test conditions min max units pnp general purpose amplifier (continued) off characteristics small signal characteristics on characteristics v (br)ceo collector-emitter sustaining voltage* i c = 1.0 ma, i b = 0 60 v v (br)cbo collector-base breakdown voltage i c = 10 m a, i e = 0 60 v v (br)ebo emitter-base breakdown voltage i e = 10 m a, i c = 0 5.0 v i cbo collector-cutoff current v cb = 50 v, i e = 0 50 na i ebo emitter-cutoff current v eb = 5.0 v, v ce = 0 v eb = 4.0 v, i c = 0 10 100 m a na c obo output capacitance v cb = 10 v, i e = 0, f = 1.0 mhz 30 pf c ibo input capacitance v eb = 0.5 v, i c = 0, f = 1.0 mhz 110 pf h fe small-signal current gain i c = 50 ma, v ce = 10 v, f = 100 mhz 1.0 5.0 nf noise figure i c = 100 m a, v ce = 10 v, r s = 1.0 k w , f = 1.0 khz, bw = 1.0 hz 1.0 3.0 db switching characteristics t on turn-on time i c = 500 ma, v cc = 500 ma 100 ns t off turn-off time i b1 = i b2 = 50 ma 400 ns * pulse test: pulse width 300 m s, duty cycle 1.0% h fe dc current gain i c = 100 m a, v ce = 10 v i c = 1.0ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 100 ma, v ce = 10 v i c = 500 ma, v ce = 10 v 60 75 100 75 75 400 v ce( sat ) collector-emitter saturation voltage i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma i c = 1.0 a, i b = 100 ma 0.15 0.50 1.0 v v v v be( sat ) base-emitter saturation voltage i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma i c = 1.0 a, i b = 100 ma 0.9 1.1 1.2 v v v v be( on ) base-emitter on voltage i c = 500 ma, v ce = 0.5 v i c = 1.0 a, v ce = 1.0 v 1.1 1.2 v v
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